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M392B5170EM1-CH9 Samsung 4GB DDR3-1333 CL9 ECC VLP RDIMM Memory

SKU:
M392B5170EM1-CH9
Weight: 3.00 lbs
Condition: Refurbished
  • 4GB DDR3-1333 ECC Registered DIMM memory module
  • CAS Latency 9 (CL9) for balanced performance
  • Very Low Profile (VLP) form factor for space-constrained servers
  • Designed for error correction in server environments

Product Overview

The Samsung M392B5170EM1-CH9 memory module provides 4GB of DDR3-1333 capacity with ECC support to enhance server memory reliability. It utilizes a Registered DIMM (RDIMM) design with a very low profile form factor, making it suitable for compact server environments requiring error correction and stable memory operation.

General Information

Brand Samsung

Technical Information

Memory Capacity 4GB
Memory Technology DDR3
RAM Standard PC3-10600
Pin Count 240-Pin
Error Correction ECC
Voltage 1.5V

Performance

Bus Speed 1333 MT/s
Bandwidth 10600 MB/s
Native Speed 1333 MHz
CAS CL9

Physical Characteristics

Weight 3.00
Condition Refurbished

Miscellaneous

Eco Friendly Yes
Compliance Standards RoHS
Assembly Required No


Product Description

The Samsung M392B5170EM1-CH9 is a 4GB DDR3-1333 ECC VLP RDIMM memory module designed for use in server and enterprise-class systems. It provides error-correcting code (ECC) functionality to detect and correct memory errors, helping maintain system stability.

This memory module features a Registered DIMM (RDIMM) design with a very low profile (VLP), making it suitable for dense server configurations where space is limited. It operates at a frequency of 1333 MHz with a CAS latency of 9 (CL9), balancing performance with reliability.

Key Features
  • 4GB capacity DDR3 memory
  • 1333 MHz operating frequency
  • ECC support for error correction
  • Registered DIMM (RDIMM) architecture
  • Very Low Profile (VLP) form factor

This module is typically used in server systems where data integrity and memory reliability are critical. Its VLP design allows it to fit in servers with tight physical space, and ECC capability helps maintain system uptime by preventing data corruption.


Use Cases

This memory module is commonly used in server and enterprise environments where ECC memory is required to maintain data integrity. It suits dense rack servers and blade servers where space is limited and reliable memory performance is essential.

How It's Used:
  • Installed in 1U or 2U rack servers requiring ECC memory
  • Used in blade server systems with limited memory slot space
  • Deployed in data center servers needing registered DIMM memory
  • Configured in enterprise-grade storage servers demanding error correction
  • Utilized in systems requiring 1333 MHz DDR3 memory speed with low profile modules

By providing ECC and RDIMM features in a compact form factor, this module supports stable and reliable server operation in environments where memory errors can impact critical workloads.


FAQ's

  • What type of memory is the M392B5170EM1-CH9?

    The M392B5170EM1-CH9 is a 4GB DDR3-1333 ECC Registered DIMM (RDIMM) memory module designed for server use.

  • What does ECC mean in this memory module?

    ECC stands for Error-Correcting Code, which detects and corrects single-bit memory errors to improve system stability.

  • Is the M392B5170EM1-CH9 compatible with standard desktop systems?

    This module is intended for servers requiring registered ECC memory and is generally not compatible with standard desktop motherboards.

  • What is the significance of the Very Low Profile (VLP) form factor?

    VLP modules have a reduced height to fit in space-constrained server configurations such as blade and rack servers.

  • What is the CAS latency of this memory module?

    The CAS latency for the Samsung M392B5170EM1-CH9 is 9 (CL9), indicating its timing delay parameter.

  • Can this memory module be used in non-ECC systems?

    This module is designed for ECC-compatible systems and will not function properly in non-ECC memory configurations.


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M392B5170EM1-CH9 Samsung 4GB DDR3-1333 CL9 ECC VLP RDIMM Memory
M392B5170EM1-CH9 Samsung 4GB DDR3-1333 CL9 ECC VLP RDIMM Memory