Name: 9965426-142.A00LF Kingston 4GB DDR3 1600MHz CL11 ECC UDIMM Memory
Brand: Kingston
SKU: 9965426-142.A00LF
Price: 1.00 USD
Availability: InStock
Rating: 4.8 (122 reviews)

Product Overview
The Kingston 4GB DDR3 1600MHz CL11 ECC UDIMM Memory module offers error-correcting unbuffered DIMM design suited for compatible server and workstation platforms. It delivers 4GB DDR3 capacity running at 1600MHz with CAS Latency 11 to ensure precise timing and stability in error-sensitive applications.

General Information
Brand	Kingston

Technical Information
Memory Capacity	4GB
Memory Technology	DDR3
Module Type	UDIMM
RAM Standard	PC3-12800
Pin Count	240-Pin
Error Correction	ECC
Voltage	1.5V

Performance
Bus Speed	1600MHz
Bandwidth	12800 MB/s
Native Speed	1600MHz
CAS	CL11

Physical Characteristics
Weight	3.00
Condition	Refurbished

Miscellaneous
Eco Friendly	Yes
Compliance Standards	RoHS, CE
Assembly Required	No

Product Description
The Kingston 4GB DDR3 1600MHz CL11 ECC UDIMM Memory module is designed to provide stable and error-correcting memory for compatible systems. It supports DDR3 technology at 1600MHz with CAS latency of 11, suitable for systems requiring error detection and correction. This memory module is mainly used in workstations and servers where ECC (Error-Correcting Code) functionality is essential to maintain data integrity during operation. IT professionals and system administrators commonly use this module to maintain system stability and reduce data corruption risks. Key Features 4GB capacity DDR3 module for handling moderate memory workloads 1600MHz speed to match compatible DDR3 system memory buses CAS Latency of 11 ensuring defined access timing ECC UDIMM type providing error correction capabilities Standard unbuffered DIMM suitable for specific server/workstation motherboards This memory module fits into systems requiring ECC support to help prevent data errors and system crashes. It plays a practical role in environments where reliability and data accuracy are critical. The 1600MHz speed and CL11 timing provide consistent performance within its specification range.

Use Cases
This memory module is typically deployed in server and workstation environments where ECC memory support is required to maintain data integrity. It suits workloads that involve data processing tasks sensitive to memory errors, such as database management or financial computations. How It's Used: Installed in servers requiring 4GB DDR3 ECC memory modules Used in workstations handling ECC-supported professional applications Deployed in data centers for error-correcting memory needs Employed in systems running critical workloads prone to data corruption risks Utilized for memory upgrades in compatible ECC-enabled motherboards Overall, the module helps maintain system stability by correcting single-bit memory errors. It supports the reliability and accuracy requirements important in enterprise and professional computing contexts.

FAQ's
What does ECC UDIMM mean? ECC UDIMM stands for Error-Correcting Code Unbuffered Dual Inline Memory Module. It detects and corrects single-bit memory errors to improve data integrity in compatible systems. Is this memory compatible with standard desktops? This module is designed for systems supporting ECC unbuffered DDR3 memory, typically servers or workstations. It may not be compatible with standard desktop motherboards lacking ECC support. What does CL11 indicate in this module? CL11 refers to the CAS Latency, which is the delay between a memory request and data availability. A CL of 11 means 11 clock cycles delay for DDR3-1600 modules. Can this module work in non-ECC systems? This memory requires ECC support at the motherboard level to function properly. It is generally not supported or recognized by non-ECC systems. What is the significance of 1600MHz speed? The 1600MHz indicates the operating frequency of the DDR3 memory. It must match or be supported by the system memory controller for proper operation. Does the 4GB size limit system performance? The 4GB capacity is suitable for moderate workloads but may limit memory-intensive applications. Larger capacities may be needed for high-demand environments.