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Product Overview |
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The M312L5128MT0-CB0 Samsung 4GB DDR Registered ECC PC-2100 (266MHz) 184-pin RDIMM delivers dependable, CL2.5 dual-rank x4 (2Rx4) performance for legacy server systems, combining ECC error correction with registered buffering to enhance stability in sustained, always-on deployments such as infrastructure services, embedded server appliances, and maintenance of validated production stacks. |
General Information |
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| Brand | Samsung |
| Part Number | M312L5128MT0-CB0 |
Technical Information |
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| Memory Capacity | 4GB |
| Memory Technology | DDR |
| RAM Standard | PC-2100 |
Physical Characteristics |
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| Weight | 0.50 |
| Condition | Refurbished |
Product Description |
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This Samsung 4GB DDR Registered ECC module is engineered for dependable operation in legacy servers that require DDR-266 (PC-2100) RDIMMs, delivering stable performance for business-critical applications and infrastructure. Key Features
Ideal for extending the life of datacenter and edge servers that specify PC-2100 ECC Registered memory, supporting roles such as file/print services, monitoring, or appliance-style workloads. It benefits administrators maintaining stable, validated platforms where consistency and compatibility matter more than raw speed. |
Use Cases |
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The M312L5128MT0-CB0 Samsung 4GB DDR Registered ECC PC-2100 memory module is designed for legacy server platforms requiring stable and reliable operation in mission-critical environments. It is ideal for IT professionals managing older infrastructure that demands error-correcting capabilities and registered buffering to maintain data integrity and consistent performance. How It's Used:
This memory module supports operational continuity by ensuring stable performance and error correction in legacy systems, helping organizations extend the lifecycle of their existing hardware. It enables administrators to maintain scalability and reliability without compromising data integrity in critical server environments. |