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MZ-V8V500BW Samsung 980 500GB PCIe 3.0

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MZ-V8V500BW Samsung 980 500GB PCIe 3.0 x4 1GB Cache M.2 2280 Internal Solid State Drive

SKU:

MZ-V8V500BW

Name: MZ-V8V500BW Samsung 980 500GB PCIe 3.0 x4 1GB Cache M.2 2280 Internal Solid State Drive
Brand: Samsung
SKU: MZ-V8V500BW
Price: 105.00 USD
Availability: InStock
Rating: 4.8 (44 reviews)

Weight: 3.00 lbs

Condition: Refurbished

✔ High-performance 500GB NVMe SSD with PCIe 3.0 x4 interface
✔ M.2 2280 form factor for seamless integration into modern systems
✔ Sequential read speeds up to 3,100 MB/s and write speeds up to 2,600 MB/s

In stock

$105.00

Product Overview
The Samsung 980 500GB PCIe 3.0 x4 NVMe M.2 2280 Internal Solid State Drive (MZ-V8V500BW) offers high-speed performance and efficient data management for a variety of computing applications. Its combination of a DRAM-less design with HMB technology, robust V-NAND 3-bit MLC flash memory, and a compact M.2 2280 form factor makes it a versatile and reliable storage solution for enhancing system responsiveness and overall user experience.

General Information
Part Number	MZ-V8V500BW
Brand	Samsung
Series	980
Drive Type	NVMe

Technical Information
Capacity	500GB
NAND Flash	V-NAND
Memory Technology	Triple-Level Cell (TLC)
Form Factor	M.2 2280
Interface	PCIe Gen 3.0 x4
Cache	1GB
MTBF	1.5 Million Hours

Performance
Max Sequential Read	Up to 3,100 MB/s
Max Sequential Write	Up to 2,600 MB/s
Random Read	Up to 400,000 IOPS
Random Write	Up to 470,000 IOPS
Endurance (TBW)	300 TBW

Physical Characteristics
Dimensions	0.09 x 0.87 x 3.16 inches
Weight	3.00
Condition	Refurbished

Product Description
The Samsung 980 500GB NVMe SSD (MZ-V8V500BW) is engineered to elevate your computing experience with its impressive performance and reliability. Utilizing the PCIe 3.0 x4 interface and NVMe 1.4 protocol, this SSD delivers sequential read speeds up to 3,100 MB/s and write speeds up to 2,600 MB/s, ensuring rapid data access and reduced load times. Its M.2 2280 form factor allows for easy installation in a wide range of devices, from ultrabooks to desktops. The DRAM-less architecture, complemented by Host Memory Buffer (HMB) technology, optimizes performance by leveraging the host system's memory, resulting in efficient and responsive operations. Key Features 500GB storage capacity suitable for everyday computing needs PCIe 3.0 x4 interface with NVMe 1.4 support for high-speed data transfer M.2 2280 form factor for compatibility with a variety of devices Sequential read speeds up to 3,100 MB/s and write speeds up to 2,600 MB/s Random read speeds up to 400,000 IOPS and write speeds up to 470,000 IOPS DRAM-less design with HMB technology for enhanced efficiency Samsung V-NAND 3-bit MLC flash memory for durability and performance