Name: MT9JSF12872PZ-1G4F1BA Micron 1GB DDR3-1333 CL9 ECC RDIMM Memory
Brand: Micron
SKU: MT9JSF12872PZ-1G4F1BA
Price: 1.00 USD
Availability: InStock
Rating: 4.8 (122 reviews)

Product Overview
The MT9JSF12872PZ-1G4F1BA Micron 1GB DDR3-1333 CL9 ECC RDIMM Memory is a server-grade module designed to enhance data integrity with error-correcting capabilities. It operates at 1333 MHz with a CAS latency of 9 and features a registered design suited for multi-module server configurations.

General Information
Brand	Micron

Technical Information
Memory Capacity	1GB
Memory Technology	DDR3 SDRAM
Module Type	RDIMM
RAM Standard	PC3-10600
Pin Count	240-Pin
Error Correction	ECC
Voltage	1.5V

Performance
Bus Speed	1333 MHz
Bandwidth	10600 MB/s
Native Speed	1333 MT/s
CAS	9

Physical Characteristics
Weight	3.00
Condition	Refurbished

Miscellaneous
Eco Friendly	Yes
Compliance Standards	RoHS
Assembly Required	No

Product Description
The MT9JSF12872PZ-1G4F1BA from Micron is a 1GB DDR3 memory module engineered for systems requiring error-correcting capabilities. It operates at a frequency of 1333 MHz and features a CAS latency of 9, making it suitable for balancing speed and stability in supported hardware. This module is a Registered DIMM (RDIMM) with ECC (Error-Correcting Code), designed to detect and correct common types of internal data corruption. Its architecture is commonly utilized in servers and workstations where data integrity is critical. Key Features 1GB DDR3 memory capacity tailored for moderate memory requirements 1333 MHz operating frequency ensuring synchronized data flow CAS latency 9 for calibrated timing performance ECC support to maintain data accuracy under load Registered DIMM format for improved electrical stability in multi-module configurations In practical terms, this memory module serves environments that demand consistent data reliability and moderate memory size per module. It fits into systems designed to utilize registered DDR3 modules with ECC, contributing to error mitigation and system robustness.

Use Cases
This memory module is typically used in server and workstation systems where data integrity and error correction are important. It suits environments that require registered ECC DIMMs to maintain system stability under demanding workloads. How It's Used: Installed in servers requiring ECC to detect and correct memory errors Used in workstations running applications sensitive to data accuracy Deployed in multi-processor systems needing registered DIMMs for signal stability Utilized in legacy DDR3 infrastructure operating at 1333 MHz speeds Applied in setups requiring moderate memory capacity per module Overall, this module plays a key role in maintaining system reliability by providing error correction and electrical stability within DDR3 server memory configurations.

FAQ's
What does ECC in this memory module mean? ECC stands for Error-Correcting Code, which helps detect and correct common data corruption errors during operation. This feature is important for maintaining data integrity in server environments. Is this module compatible with standard DDR3 slots? This module is a Registered DIMM (RDIMM), which requires motherboard support for registered DDR3 memory and is typically not compatible with standard unbuffered DDR3 DIMM slots. What is the significance of the 1333 MHz speed? The 1333 MHz speed indicates the data transfer rate of the memory module, suitable for systems designed to operate with DDR3 memory at this frequency. What does CAS latency 9 indicate? CAS latency 9 refers to the delay time between the memory controller's request and the data being available. A CL9 means nine clock cycles are needed for this process on this module. Can this 1GB module be used in modern servers? This module is designed for DDR3 platforms and may not be compatible with modern servers that require DDR4 or newer memory standards. Compatibility depends on the server motherboard specifications. What systems typically use Registered DIMM memory? Registered DIMMs are generally used in servers and workstations that require enhanced electrical stability when multiple memory modules are installed.