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MT18KSF51272AZ-1G4M1ZE Micron 4GB PC3-10600 DDR3-1333MHz ECC Unbuffered CL9 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module

SKU:

MT18KSF51272AZ-1G4M1ZE

Weight: 0.50 lbs
Condition: Refurbished
  • 4 GB DDR3-1333 (PC3-10600) capacity
  • ECC, unbuffered dual-rank (2Rx8) design
  • CL9 latency at 1333 MHz for responsive performance
  • Low-voltage operation at 1.35 V for improved power efficiency
In stock

$73.47
Product Overview

The MT18KSF51272AZ-1G4M1ZE Micron 4 GB DDR3-1333 ECC unbuffered dual-rank memory module delivers reliable low-voltage performance with ECC protection, making it well suited for server and workstation use in data-center, virtualization, or high-uptime legacy DDR3 environments.

General Information
Brand Micron
Part Number MT18KSF51272AZ-1G4M1ZE
Physical Characteristics
Weight 0.50
Condition Refurbished


Product Description

This Micron memory module is engineered for server environments requiring reliable, low-voltage DDR3 memory with error correction and dual-rank performance.

Key Features
  • 4 GB capacity supports scalable memory configurations
  • Error-Correcting Code (ECC) enhances data integrity
  • Unbuffered dual-rank 2Rx8 layout maximizes compatibility
  • 1.35 V low-voltage design reduces thermal output
  • CL9 latency at 1333 MHz balances speed and stability

Ideal for enterprise-grade servers and workstations, this module excels in environments that demand continuous uptime, efficient power usage, and robust error correction. It suits deployments in data centers, virtualization hosts, or legacy DDR3-compatible systems.


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MT18KSF51272AZ-1G4M1ZE Micron 4GB PC3-10600 DDR3-1333MHz ECC Unbuffered CL9 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module
MT18KSF51272AZ-1G4M1ZE Micron 4GB PC3-10600 DDR3-1333MHz ECC Unbuffered CL9 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module
$73.47