MTA9ASF1G72AZ-3G2E2

The Micron MTA9ASF1G72AZ-3G2E2 is an 8GB DDR4 memory module designed to deliver superior performance and reliability for modern computing environments. Operating at a speed of 3200MHz (PC4-25600), this memory module enhances system responsiveness and multitasking capabilities. With a CAS latency of CL22, it offers a balanced approach to speed and efficiency, making it suitable for both consumer and enterprise applications.

Equipped with Error-Correcting Code (ECC) technology, this unbuffered DIMM module ensures data integrity by detecting and correcting common memory errors. The 288-pin form factor and a single rank design (1R) allow for easy integration into various systems, while the 1.2V operating voltage contributes to energy efficiency. The module is organized as 1024M x 72 (1GB x 72-bit), providing optimal performance for memory-intensive tasks.

Key Features:

• Capacity: 8GB, ideal for improving system performance in multitasking environments.
• DDR4 SDRAM: Latest memory technology offering increased bandwidth and reduced power consumption.
• Speed: 3200MHz (PC4-25600) for fast data transfer and enhanced overall system responsiveness.
• CAS Latency (CL): CL22, providing a balance between speed and efficiency.
• Error Correction (ECC): Ensures data integrity by detecting and correcting memory errors.
• Unbuffered Design: Suitable for a wide range of systems without added complexity.
• Form Factor: 288-pin DIMM, compatible with most motherboards.
• Voltage: Operates at 1.2V for improved energy efficiency.
• Single Rank (1R): Provides effective performance in memory-intensive applications.

The Micron MTA9ASF1G72AZ-3G2E2 memory module is an excellent choice for users looking to upgrade their systems with reliable, high-performance memory that ensures data integrity and efficient operation.