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Product Overview |
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The Samsung 64GB DDR3-1600MHz PC3-12800 ECC Registered LRDIMM is a high-capacity memory module designed for servers and professional computing environments. It fits into standard 240-pin slots and offers error correction features that help maintain system stability during intensive use. |
General Information |
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| Brand | Samsung |
| Part Number | M386B8G70DE0-CK03Q |
Technical Information |
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| Memory Capacity | 64GB |
| Memory Technology | DDR3 |
| RAM Standard | PC3-12800 |
| Pin Count | 240-Pin |
| Error Correction | ECC |
| Rank | 8Rx4 |
| Voltage | 1.5V |
Performance |
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| Bus Speed | 1600MT/s |
| Bandwidth | 12800 MB/s |
| Native Speed | 1600MHz |
| CAS | CL11 |
Physical Characteristics |
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| Weight | 0.50 |
| Condition | Refurbished |
Product Description |
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This Samsung 64GB DDR3 memory module is built for servers and workstations that demand high capacity and reliability. It is commonly used in enterprise environments where error correction and stable performance are critical. IT professionals and system administrators often rely on these modules to maintain data integrity during heavy workloads. Key Features
This memory module is typically found in data centers, servers, and high-end computing systems where uptime and performance reliability are priorities. Its ECC capabilities help prevent crashes and data corruption, making it a preferred choice for mission-critical applications. |
Use Cases |
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The Samsung 64GB DDR3-1600MHz PC3-12800 ECC Registered LRDIMM memory module is optimized for high-density server environments where reliability and error correction are critical. It is particularly suited for IT infrastructure requiring large memory capacities, such as virtualization platforms and database servers in enterprise data centers. How It's Used:
This memory module contributes to operational efficiency by enabling higher memory densities with error correction in demanding server workloads. Its compatibility with registered DIMM architectures allows for scalable configurations that maintain system stability under continuous heavy usage. |