Name: M386B4G70DM0-CMA4QM Samsung 32GB DDR3-1866 CL13 ECC RDIMM Memory
Brand: Samsung
SKU: M386B4G70DM0-CMA4QM
Price: 1.00 USD
Availability: InStock
Rating: 4.8 (122 reviews)

Product Overview
The Samsung 32GB DDR3-1866 CL13 ECC RDIMM Memory module delivers error-correcting code functionality within a registered DIMM form factor, supporting DDR3-1866 speeds and a CAS latency of 13. It is targeted at server and workstation applications requiring high memory capacity and data integrity.

General Information
Brand	Samsung

Technical Information
Memory Capacity	32GB
Memory Technology	DDR3
Module Type	RDIMM
RAM Standard	PC3-14900
Pin Count	240-Pin
Error Correction	ECC
Voltage	1.5V

Performance
Bus Speed	1866 MT/s
Bandwidth	14900 MB/s
Native Speed	1866 MHz
CAS	13

Physical Characteristics
Package	FBGA
Weight	3.00
Condition	Refurbished

Miscellaneous
Compliance Standards	RoHS
Assembly Required	No

Product Description
The Samsung M386B4G70DM0-CMA4QM is a 32GB DDR3-1866 memory module designed for use in servers and workstations. It features ECC (Error-Correcting Code) to detect and correct common types of internal data corruption. With a CAS latency of 13, it balances response time and memory throughput effectively. This module utilizes a registered DIMM (RDIMM) architecture, which provides additional signal integrity and stability for multi-module configurations in enterprise environments. The module supports a data rate of 1866 MT/s, aligning with DDR3 standards for improved bandwidth over lower-speed DDR3 modules. Key Features 32GB memory capacity suitable for high-memory-demand applications DDR3-1866 speed supports enhanced data transfer rates CAS Latency 13 reduces access delay while maintaining stability ECC functionality to maintain data integrity in critical systems Registered DIMM design for improved system stability and scalability This memory module is suitable for IT environments requiring dependable memory with error correction and capacity to support demanding server or workstation workloads. Its design aids in maintaining system reliability and performance in complex computing setups.

Use Cases
This Samsung memory module is typically used in server and workstation configurations where stability and data integrity are critical. Suitable for environments running enterprise applications, database servers, and virtualization platforms that require large memory pools with error correction. How It's Used: Installed in enterprise servers to provide high-capacity memory with ECC protection Used in workstations handling data-intensive tasks requiring reliable memory Deployed in virtualization servers needing large memory footprints Integrated into systems requiring registered DIMM memory for signal integrity Applied in database servers to enhance uptime and data consistency The module supports operational reliability in mission-critical environments by reducing memory-related errors and enabling scalable memory configurations where multiple DIMMs are used.

FAQ's
What type of memory is the Samsung M386B4G70DM0-CMA4QM? It is a 32GB DDR3-1866 ECC Registered DIMM memory module designed primarily for server and workstation use. What does ECC in this memory module mean? ECC stands for Error-Correcting Code, a feature that detects and corrects common data corruption, improving system reliability. What is the significance of CL13 in this memory? CL13 denotes the CAS latency of 13 clock cycles, indicating the delay time for data access after a memory read command. Is this memory module compatible with standard desktop systems? This module is a registered DIMM intended for servers and workstations and may not be compatible with standard desktop systems requiring unbuffered memory. What advantages does Registered DIMM provide? Registered DIMMs include a register between the memory and the controller, enhancing signal integrity and enabling stable operation with multiple memory modules installed. Can this memory be used in systems requiring DDR4 RAM? No, this module is DDR3 memory and is not compatible with systems that require DDR4 memory due to different electrical and physical specifications.