
Subscribe To Our Newsletter!
Subscribe to the newsletter to stay up to date with the latest news and most useful
Newsletter
↑
Back to Top
| Product Overview |
|---|
The M321RBJA0M22-CLPGL Samsung 256GB DDR5-6400 PC5-51200 4Rx4 ECC Memory offers high-capacity DDR5 technology combined with ECC error correction, delivering fast data transfer rates and enhanced reliability suitable for enterprise and mission-critical applications. |
| General Information | |
|---|---|
| Brand | Samsung |
| Part Number | M321RBJA0M22-CLPGL |
| Technical Information | |
|---|---|
| Memory Capacity | 256GB |
| Memory Technology | DDR5 |
| Module Type | RDIMM |
| RAM Standard | PC5-51200 |
| Pin Count | 288-Pin |
| Error Correction | Yes |
| Physical Characteristics | |
|---|---|
| Package | FBGA |
| Weight | 0.50 |
| Condition | Refurbished |
| Miscellaneous | |
|---|---|
| Eco Friendly | Yes |
| Compliance Standards | WEEE, RoHS, cULus |
| Assembly Required | No |
| Product Description |
|---|
The M321RBJA0M22-CLPGL Samsung 256GB DDR5-6400 PC5-51200 4Rx4 ECC Memory module is a high-capacity RAM designed to deliver fast and reliable performance for demanding computing environments. It is typically installed in servers, workstations, and enterprise-grade systems where data integrity and speed are critical. This memory module benefits IT professionals, data center operators, and system builders who require robust error correction features and high bandwidth to support intensive applications and large-scale data processing. Key Features
With its advanced DDR5 technology and ECC capabilities, this Samsung memory module ensures optimal system uptime and data accuracy. It is engineered to meet the needs of modern computing workloads, providing a solid foundation for scalable and efficient system performance. |
| Use Cases |
|---|
This Samsung memory module is designed to support environments requiring large memory capacities and error-free operation. How It's Used:
Its robust design and error correction make it ideal for any application where memory reliability and performance are paramount. |