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| Product Overview |
|---|
The M321R2GA3EB2-CWMJJ Samsung 16GB DDR5-5600 PC5-44800 1Rx8 ECC Registered Memory offers high-speed DDR5 technology paired with ECC Registered design, providing 16GB capacity at 5600 MT/s transfer rates for reliable and efficient server and workstation performance. |
| General Information | |
|---|---|
| Brand | Samsung |
| Part Number | M321R2GA3EB2-CWMJJ |
| Technical Information | |
|---|---|
| Memory Capacity | 16GB |
| Memory Technology | DDR5 |
| Module Type | RDIMM |
| RAM Standard | PC5-44800 |
| Pin Count | 288-Pin |
| Error Correction | ECC Registered |
| Rank | 1Rx8 |
| Performance | |
|---|---|
| Bus Speed | 5600 MT/s |
| Bandwidth | 44800 MB/s |
| Native Speed | 5600 MT/s |
| Physical Characteristics | |
|---|---|
| Package | FBGA |
| Weight | 0.50 |
| Condition | Refurbished |
| Miscellaneous | |
|---|---|
| Assembly Required | No |
| Product Description |
|---|
The M321R2GA3EB2-CWMJJ Samsung 16GB DDR5-5600 PC5-44800 1Rx8 ECC Registered Memory is a high-speed, reliable RAM module designed for server and workstation environments. It provides enhanced data integrity through ECC (Error-Correcting Code) technology, which is essential for critical applications where data accuracy is paramount. This memory module is generally used in enterprise-grade servers, data centers, and professional workstations that require fast and stable memory performance. IT professionals and system administrators benefit from its robust error correction capabilities, helping to reduce system crashes and data corruption. Key Features
With its combination of speed, capacity, and error correction, this Samsung memory module supports efficient multitasking and data-intensive processing. It is suitable for use in environments where uptime and data integrity are critical. |
| Use Cases |
|---|
This Samsung 16GB DDR5 ECC Registered Memory module is ideal for environments demanding high reliability and performance. How It's Used:
Its ECC Registered design ensures data integrity, making it a dependable choice for systems where memory errors can lead to significant disruptions. |