
Subscribe To Our Newsletter!
Subscribe to the newsletter to stay up to date with the latest news and most useful
Newsletter
↑
Back to Top
| Product Overview |
|---|
The Intel DC P4101 512GB 6Gb/s PCIe NVMe M.2 2280 SSD (SSDPEKKA512G801) is a high-performance storage solution built for demanding environments. Offering fast data transfers with PCIe 3.0 x4 and NVMe 1.2, this SSD provides excellent sequential and random read/write speeds. Its 1,000 TBW endurance rating ensures it will stand up to heavy workloads, making it an excellent choice for enterprise data centers and mission-critical applications. |
| General Information | |
|---|---|
| Brand | Intel |
| Part Number | SSDPEKKA512G801 |
| Series | DC P4101 |
| Drive Type | NVMe |
| Technical Information | |
|---|---|
| Memory Technology | Triple-Level Cell (TLC) |
| Form Factor | M.2 2280 |
| Interface | PCIe Gen 3.0 x4 |
| MTBF | 2 Million Hours |
| Performance | |
|---|---|
| Max Sequential Read | Up to 560 MB/s |
| Max Sequential Write | Up to 2900 MB/s |
| Random Read | Up to 100,000 IOPS |
| Random Write | Up to 90,000 IOPS |
| Endurance (TBW) | 1,000 TBW |
| Physical Characteristics | |
|---|---|
| Dimensions | 0.09 x 0.87 x 3.15 inches |
| Weight | 0.50 |
| Condition | Refurbished |
| Product Description |
|---|
The Intel DC P4101 512GB 6Gb/s PCIe NVMe M.2 2280 Solid State Drive (SSDPEKKA512G801) is designed to deliver exceptional performance for data centers and enterprise environments. Utilizing Intel's 64-Layer 3D TLC NAND Flash technology, this SSD offers a reliable and high-performing solution for demanding applications. With PCIe 3.0 x4 support and NVMe 1.2 interface, the drive ensures quick data transfers, with sequential read speeds up to 560 MB/s and sequential write speeds up to 2900 MB/s. Key Features
This SSD is ideal for use in data centers and enterprise-level applications where speed, endurance, and high performance are crucial. With its high endurance rating and fast read/write speeds, it is well-suited for applications requiring frequent and intensive data access. |