Name: HMN82GR7AFR4N-VKF8AA SK Hynix 16GB DDR4 2666MHz CL19 ECC NVDIMM
Brand: SK Hynix
SKU: HMN82GR7AFR4N-VKF8AA
Price: 1.00 USD
Availability: InStock
Rating: 4.8 (129 reviews)

Product Overview
The HMN82GR7AFR4N-VKF8AA SK Hynix module is a 16GB DDR4 memory designed to operate at 2666MHz with a CAS latency of 19. It features ECC to provide error correction and is built as an NVDIMM, combining volatile and non-volatile memory characteristics for systems requiring persistent data retention.

General Information
Brand	SK Hynix

Technical Information
Memory Capacity	16GB
Module Type	NV-DIMM
RAM Standard	PC4-21300
Pin Count	288-Pin
Error Correction	ECC
Voltage	1.2V

Performance
Bus Speed	2666MHz
Bandwidth	21300 MB/s
Native Speed	2666 MT/s
CAS	19

Physical Characteristics
Weight	3.00
Condition	Refurbished

Miscellaneous
Eco Friendly	Yes
Compliance Standards	RoHS
Assembly Required	No

Product Description
The HMN82GR7AFR4N-VKF8AA from SK Hynix is a 16GB DDR4 memory module designed for systems requiring error correction and data persistence. It operates at a frequency of 2666MHz with a CAS latency of 19, supporting workloads that benefit from both performance and reliability. This module is an ECC NVDIMM, offering error correction capabilities alongside non-volatile memory features, which help in maintaining data integrity during power loss events. It is typically utilized in enterprise server environments and data centers where stability and data retention are important. Key Features 16GB capacity DDR4 memory chip 2666MHz operating frequency for DDR4 standard speed CAS latency of 19 for balanced access timing ECC support to detect and correct memory errors NVDIMM technology enabling non-volatile data storage This memory module plays a crucial role in server and storage systems requiring consistent uptime and data integrity. The integration of ECC with NVDIMM technology provides a safeguard against data loss and corruption, making it valuable for mission-critical applications.

Use Cases
This SK Hynix 16GB DDR4 ECC NVDIMM module is typically deployed in data centers and enterprise servers where memory reliability and data persistence are crucial. It supports workloads that demand error correction and can maintain data integrity during unexpected power interruptions. How It's Used: Installed in enterprise servers requiring ECC memory for enhanced error correction Used in storage systems that benefit from non-volatile DIMM technology for data retention Deployed in mission-critical environments needing to minimize data loss risks Integrated into systems supporting workloads with high availability requirements Utilized in data center operations where memory reliability impacts uptime The HMN82GR7AFR4N-VKF8AA module supports stable system operation by combining ECC error correction and NVDIMM persistence. It serves a specialized role in maintaining data integrity and continuity in environments sensitive to memory errors and power disruptions.

FAQ's
What is the capacity of the HMN82GR7AFR4N-VKF8AA memory module? The module has a total capacity of 16GB, suitable for systems requiring moderate memory size with error correction and persistence features. What frequency does this SK Hynix DDR4 memory run at? This memory operates at a speed of 2666MHz, aligning with DDR4 standard frequency specifications for balanced performance. Does this memory support ECC functionality? Yes, the HMN82GR7AFR4N-VKF8AA includes ECC support, which enables detection and correction of memory errors to maintain system stability. What does NVDIMM indicate on this module? NVDIMM stands for Non-Volatile Dual In-line Memory Module, meaning it combines DRAM speed with persistent storage capabilities to retain data during power loss. Is this module compatible with standard DDR4 slots? The module is a specialized NVDIMM designed for systems that support ECC and non-volatile memory; compatibility depends on motherboard and system support for NVDIMM modules. What is the CAS latency of this memory? The HMN82GR7AFR4N-VKF8AA operates with a CAS latency of 19, which influences the timing delay for data access within the memory.