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M393B1K70CH0-YH904 Samsung 8GB DDR3-1333 CL9 ECC RDIMM Memory

SKU:
M393B1K70CH0-YH904
Weight: 3.00 lbs
Condition: Refurbished
  • 8GB DDR3 SDRAM module with 1333 MHz data rate
  • Supports ECC for error detection and correction
  • Registered DIMM (RDIMM) form factor for server use
  • CAS latency of 9 (CL9) for balanced performance

Product Overview

The Samsung 8GB DDR3-1333 CL9 ECC RDIMM Memory module is designed for server and workstation use, featuring an 8GB DDR3 capacity operating at 1333 MT/s. It incorporates ECC for error correction and uses a registered DIMM form factor to ensure compatibility with systems requiring buffered memory modules.

General Information

Brand Samsung

Technical Information

Memory Capacity 8GB
Memory Technology DDR3 SDRAM
Module Type RDIMM
RAM Standard PC3-10600
Pin Count 240-Pin
Error Correction ECC
Rank 2Rx4
Voltage 1.5V

Performance

Bus Speed 1333MHz
Bandwidth 10667 MB/s
Native Speed 1333MHz
CAS 9

Physical Characteristics

Weight 3.00
Condition Refurbished

Miscellaneous

Eco Friendly Yes
Compliance Standards RoHS, CE
Assembly Required No


Product Description

The Samsung M393B1K70CH0-YH904 is an 8GB DDR3 memory module designed primarily for server and workstation environments. It provides reliable system memory with error-correcting code (ECC) to help maintain data integrity during operation. This RDIMM module operates at a speed of 1333 MT/s, suitable for systems requiring balanced memory throughput.

This module is typically used in enterprise-grade servers where stability and data accuracy are critical. IT professionals and system builders utilize this type of memory for configurations demanding ECC support and registered buffering.

Key Features
  • 8GB capacity DDR3 SDRAM
  • 1333 MT/s speed with CAS latency 9
  • ECC support for error correction
  • Registered DIMM (RDIMM) design for server compatibility
  • Samsung-manufactured memory module

This memory module plays an important role in server reliability by detecting and correcting memory errors, helping to reduce system crashes and data corruption. It supports workloads that require consistent memory performance with error management capabilities.


Use Cases

This memory module is commonly deployed in enterprise server environments and high-reliability workstations where ECC memory is essential. It suits workloads that benefit from error-detection capabilities and systems that require registered DIMMs for stability.

How It's Used:
  • Installed in rack or tower servers for business-critical applications
  • Used in database servers requiring error correction to maintain uptime
  • Deployed in virtualization hosts to support multiple virtual machines
  • Utilized in scientific computing environments needing data integrity
  • Integrated into workstations handling demanding computational tasks

In these settings, the memory module supports stable system operation by minimizing memory errors, contributing to the overall reliability of IT infrastructure.


FAQ's

  • What type of memory module is the M393B1K70CH0-YH904?

    It is an 8GB DDR3 ECC Registered DIMM (RDIMM) memory module designed for server use.

  • What speed does this Samsung memory operate at?

    The module operates at a data rate of 1333 MT/s with a CAS latency of 9.

  • Does this memory support error correction?

    Yes, it supports ECC which detects and corrects memory errors to improve system stability.

  • What systems typically use this RDIMM memory?

    This memory is typically used in enterprise servers and workstations that require buffered and error-correcting memory.

  • Is this module compatible with non-registered systems?

    No, RDIMM modules require compatible server or workstation motherboards that support registered DIMMs.

  • What does CL9 mean in this memory's specification?

    CL9 refers to the CAS latency, indicating the delay between memory request and data availability, with a latency of 9 clock cycles.


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M393B1K70CH0-YH904 Samsung 8GB DDR3-1333 CL9 ECC RDIMM Memory
M393B1K70CH0-YH904 Samsung 8GB DDR3-1333 CL9 ECC RDIMM Memory