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Product Overview |
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The Samsung M391B5273DH0-YH9 is a 4GB DDR3-1333 ECC UDIMM memory module designed to provide error-correcting capabilities for improved data integrity. It fits into standard unbuffered DIMM slots and operates at a CAS Latency of 9, supporting systems that require ECC memory for stability. |
General Information |
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| Brand | Samsung |
Technical Information |
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| Memory Capacity | 4GB |
| Memory Technology | DDR3 |
| Module Type | UDIMM |
| RAM Standard | PC3-10600 |
| Pin Count | 240-Pin |
| Error Correction | ECC |
| Voltage | 1.5V |
Performance |
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| Bus Speed | 1333MHz |
| Bandwidth | 10600 MB/s |
| Native Speed | 1333 MT/s |
| CAS | 9 |
Physical Characteristics |
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| Weight | 3.00 |
| Condition | Refurbished |
Miscellaneous |
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| Eco Friendly | Yes |
| Compliance Standards | WEEE, RoHS, CE |
| Assembly Required | No |
Product Description |
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The Samsung M391B5273DH0-YH9 is a 4GB DDR3-1333 ECC UDIMM memory module designed to enhance system memory capacity while maintaining data integrity. It is typically used in systems requiring error correction to prevent data corruption and system crashes. This memory is generally deployed in workstations, entry-level servers, and desktops where ECC support is necessary for stability and reliability. IT professionals and system builders benefit from its error-correcting capabilities and standard DIMM design. Key Features
This module plays a critical role in maintaining system data accuracy and stability, particularly in environments where error correction is essential. Its combination of DDR3-1333 speed and ECC functionality supports consistent memory operations under load. |
Use Cases |
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This memory module is typically used in computing environments that require error detection and correction to maintain data integrity, such as entry-level servers and workstations. It suits users who need dependable memory performance in systems supporting ECC functionality. How It's Used:
Its role is to support system stability by detecting and correcting memory errors during operation. This helps minimize data corruption and improves uptime in applications sensitive to memory faults. |
FAQ's |
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